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Etchng devices specifications / SEM images

RIE

RIE
Device Name EXAM
Etching type RIE
Substrate size Φ within 230mm
Substrate temperature 20℃
Power supply high frequency: 13.56MHz, max 500W
Gas type SF6, CF4, CHF3, O2, Ar
Others -

ICP

ICP
Device Name SID-1246
Etching type RIE
Substrate size Φ 4inches or 6inches
Substrate temperature From -10℃ to 40℃
Power supply high frequency: 13.56MHz, max 2kW
low frequency: 460kHz, max 300W
Gas type SF6, CF4, CHF3, O2, Ar
Others easy road lock, electronical chuck

SEM pictures

ICP: Si processing example

ICP: Si processing example

RIE: Si processing Upper half : a resist

RIE: Si processing Upper half : a resist

Wet etching: glass processing example

Wet etching: glass processing example

ICP: Si processing example

ICP: Si processing example

Oxidized film sacrifice layer etching example

Oxidized film sacrifice layer etching example

Si sacrifice layer etching example

Si sacrifice layer etching example

Oxidized film sacrifice layer etching example (sectional side view)

Oxidized film sacrifice layer etching example
(sectional side view)

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製品分類1 Deposition, Photolithography, Etching
製品分類2 Photolithography, Etching
プロセス分類 Prptotyping, R&D
サムネイル画像 Etching devices specifications / SEM images
説明文
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