Backside electrodes for Power devices (Al, Ti, Ni, Au, Ag)

Backside electrode deposition for Power devices with no chipping at dicing

We offer contract manufacturing of backside electrode for power device such as up-to-date IGBT or Diode.

Features

1. lean room and 2. DHF
  • Operation in clean room (Class 1000) [Pic(1)]
  • Natural oxide removal by DHF (right before sputtering) [Pic(2)]
  • Realize good adhesion to prevent chipping at dicing
  • Available for thin wafer (expertise in t=100µm)

Major structures

Major structures
  • Ti-Ni-Au
  • Ti-Ni-Ag
  • Al-1%Si   etc.

Suitable for customers such as;

  • Thin film with better adhesion for backside electrode.
  • Evaluate various film structure or thickness for backside electrode.
  • Looking for facility to realize small volume production of backside electrode.

DHF cleaning test (Si φ8”)

HF cleaning procedure

1. Verify no damages to wafer caused by chuck

2. Control chemical contamination of back side

3. Confirm cleaning by HF

1. Verify no damages to wafer caused by chuck

POLOS MCD300
Equipment Polos MCD300 [picture]
Chuck type Dedicated chuck for thin film wafer
Control wafer thickness 625µm, 165µm, 100µm

 

Results: In all three wafers no damages were observed.

2. Contamination of wafer back side

Method While spinning drops of ultra-pure water are dispensed on the wafer.
After operation the back side is checked for water droplets.
Spin conditions A) Ultra-pure water: Employed our companies cleaning conditions, followed by back side inspection.
B) DHF: Employed our companies cleaning conditions, followed by back side inspection.

 

Results A, B and A+B: In all cases no back side contamination is observed.
*Also true for thicker wafer.

3. Confirmation of cleaning by HF

DHF
Method After HF treatment the wafer is sprayed with ultra-pure water. The hydrophobic state of the surface is checked.
Wafer thickness 100µm and 165µm

 

Results:HF treated surface = hydrophobic, non HF treated surface = hydrophilic

4. Measurement of removal of oxide film

DHF
Test wafer ・φ8"Si
・About 100nm thermal oxide
・One sided polish
Removal conditions Proprietary
Natural oxide film etching rate ・Average etching rate 3.2 nm/30 sec
・Maximum rate 4.0 nm/30 sec (edge)
・Minimum rate 2.8 nm/30 sec (cente)

Results: General native oxide thickness 2.4nm, lowest etching rate 2.8nm/30sec
removal of thermal natural oxide film is possible

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製品分類1 Deposition, Photolithography, Etching
製品分類2 Backside electrode
プロセス分類 Prptotyping, R&D
サムネイル画像 Backside electrode deposition for Power devices with no chipping at dicing
説明文
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